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triac characteristics lab experiment readings

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triac characteristics lab experiment readings

Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0 0000491768 00000 n Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. %%EOF <> Experiment 5 Registration No. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Press Esc to cancel. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. 92 0 obj 0000091415 00000 n 6. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Figure 6.3b. Two AVO meter 4. 01-04 2 Static characteristics of MOSFET and IGBT. �2�m�1�U��@�i�$�Y��ր ��4�� Based on the experiment, there are four possible ways to trigger the TRIAC. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. The circuits used in the gate for triggering the device are called the gate-triggering circuits. ��(�)0P�S�%�} Testing triac using a multimeter. & latching current q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 0000491445 00000 n a��+�����F]]�5���3U�. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. 0000184919 00000 n A multimeter can be used to test the health of a triac. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. UJT Triggering of 3. Power electronic trainer 2. To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. 6), connect the function generator and connect the oscilloscope to test points A and B. Apparatus:-Experimental kit and patch cords. startxref /Contents 94 0 R Usually, a duration of 35 us is sufficient for sustaining the firing of the device. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. Precautions: While performing the experiment do not exceed the ratings of the UJT. RC Experiment No. Do you know how RFID wallets work and how to make one yourself? Is the triac conducting? Please switch off the kit when not in use. APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. *TRIAC’s have very small switching frequencies. Output characteristics The base current I B is kept constant (eg. 0000182678 00000 n x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. 24. Lab IV: Silicon Diode Characteristics – Page 2 3. 0000015723 00000 n 0000504293 00000 n k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. 0000017964 00000 n Collect seven head and discharge readings for each weir. 0000299407 00000 n 0000491689 00000 n POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) This may lead to damage of the UJT. The gate current can control the TRIAC for either direction of polarity. (6.3). The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit 0000014974 00000 n 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. ... like a triac without gate terminal, as shown in figure. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. S. No. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. These triggering circuits usually generate trigger pulses for firing the device. As���f�wS�f��)�]�1���m�ek Figure (2): RTD Characteristics Experiment. 0000001315 00000 n By applying proper signal to the gate, the firing angle of the device can be controlled. MOSFET Characteristics 15 4. 8.2. Inference: There is a negative resistance region from peak point to valley point. Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. VI Characteristics of PN Junction Diode 2. _____ 5.3 Measure the voltage across R6. VI Characteristics of Zener Diode 3. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. 0000491551 00000 n <> Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. 2. 0000432995 00000 n 20µA) by … This site is awsome. Aim: To study the V-I characteristics of SCR. Power electronic trainer 2. Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 0000371364 00000 n DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter Testing triac using a multimeter. The corresponding collector current I C is noted. �Sh�x�%��H�N��b� �O9�~p�j���*EP�'"=���D� �C�@Q�5��mU1hM�����)� �=�zy�Y�C�H��֍����T-+$�8$ ����}�F�)}U���2F&�o�����V+w-'iC`��[�+�5�I������Bk�VlT���x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]���,�e=,8#�xQ�VS�,��m�����u�}�����΁Ĵ�ي�e[��:���PV���}���S�D��b']�D���;�2W�O������;�a/qZx���%j#,E�Y�W�c}7e>�������ܳ��:����-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B����+2��2��=͌�{o"u;�7[x��� kzx���Po!aE�Vq��֭�~}5t���S��`�R Aq�|0P�����*T$����.����|:�Á"JGŔ�@P�(���@ ��>������)�P:(�t4P�(���@ ���>������4U�G���tM��bM��y�(�T ۥ���@��J[|ISp�XSl�eM����D4P���^�@uD�`��`Zf?4P�~`����@1����D����^���@1����C���#�_.`/�~p�XS���5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5���é`�/i ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. and corresponding graphs are plotted. 5. }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� This list is not all-inclusive; however, it does contain the most commonly used symbols. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. Experiment procedure 1. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. Sketch Characteristics of TRIAC A chart of the symbols used in the Lab IV. 10. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. 2. Start taking readings by pressing [Read] button over different temperature values. Lab 3 Appendices: Data sheets and Curve Tracer operation. Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. To obtain V-I characteristics and to find on-state forward resistance of given SCR. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. 2. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. <> A typical triac has the following voltage/current values: This information helped me in labs very much. Sketch the VI characteristics of TRIAC. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. 5 R-C Triggering TRIAC Circuit Objectives: 1. VI CHARACTERISTICS OF MOSFET 14 4. To plot the input and transfer3. 0000239271 00000 n 21. A multimeter can be used to test the health of a triac. <> Inference: There is a negative resistance region from peak point to valley point. Tabulation Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 2) Output Characteristics. 1-6 2 Static characteristics of MOSFET & IGBT. Two DC power p-n . 0000014932 00000 n %PDF-1.4 4. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching Now the collector voltage is increased by adjusting the rheostat Rh 2. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� Repeat the above experiment for different values of VDS2 = 15V. The gate-triggering circuits for the triac are almost same like those used for SCRs. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. 91 33 �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, endobj 0000015657 00000 n SCR Characteristics 3 2. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. 6.3.2 illustrates the main characteristics of the triac. TRANSIENT 6. 0000297166 00000 n �%d����f5�� trailer Experiment 5 Registration No. 0000015452 00000 n ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. It is a bidirectional device, means it can conduct current in both the directions. EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. Note: If the connections are made wrong the kit may get damaged. Table 1. No 1. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). Output characteristics. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). 7-15 3 Controlled HWR & FWR using RCcircuit. ... if provided for this experiment. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. This is repeated for increasing values of I B. ��(�)0P��� ���%�} 2. 0000089174 00000 n It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. 0000015249 00000 n The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … 0000373605 00000 n Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. ; V GT is a range of gate voltages that will trigger conduction. 0000491583 00000 n You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … Dual channel Oscilloscope 3. The reading shows the setting of main time base (time/div). k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i Theory:-A Semiconductor diode is prepared by joining P and N sections of a 3. Measure the voltage across R6 and across the triac, respectively. Dual channel Oscilloscope 3. Lab 3 Appendices: Data sheets and Curve Tracer operation. This is expected because triac consists of two SCRs connected in parallel but opposite in … POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. stream ☞Repeat from step 2 for another value of gate current IG. 0000001089 00000 n The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. 0000000973 00000 n Increase in V BB1 increases the value of peak and valley voltages. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. 93 0 obj Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V Our webiste has thousands of circuits, projects and other information you that will find interesting. The gate is the control terminal of the device. _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. When is the sensitivity of TRIAC greatest? T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u 7-15 3 Controlled HWR & FWR using RC Triggering circuit. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. Characteristics of CE Transistor 4. APPARATUS REQUIRED: i. Thank you. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. 0000014910 00000 n 6.3.2 illustrates the main characteristics of the triac. of ECE CREC 3 1. RC Triggering Circuit – HWR & FWR 196. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… 6. VI CHARACTERISTICS OF TRIAC 8 3. c) Turn the bench regulating valve to the fully closed position.

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